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DS142 96901 SE2302 3007A 2SCR533 337M0 34603 ALD2706A
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  Datasheet File OCR Text:
 Advanced Power MOSFET
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P-CHANNEL POWER MOSFET
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P-CHANNEL POWER MOSFET








-ID , Drain Current [A]
-ID , Drain Current [A]
10 0
10 0
1 -1 0
1 -1 0
1 0 oC 5 2 oC 5 @Nts: oe 1 V =0V . GS 2 V =-0V . DS 5 us et 3 2 0 s P l e T s .5
1 -2 -1 0 1 0
@Nts: oe 1 2 0 s P l e T s .5 us et 2 T = 2 oC .C 5 10 0 11 0
1 -2 0
2
4
6
8
1 0
-VDS , Drain-Source Voltage [V]
-VGS , Gate-Source Voltage [V]
% & !
1 5
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-IDR , Reverse Drain Current [A]
Drain-Source On-Resistance
1 2
V =-0V 1 GS
10 0
RDS(on) , [ ]
9
6 V =-0V 2 GS 3 @Nt :T =2 C oe J 5 0 0 1 2 3 4 5 6
o
1 -1 0 @Nts: oe 1 V =0V . GS us et 2 2 0 s P l e T s .5
1 0 oC 5 2 oC 5
1 -2 0 02 04 06 08 10 12 14 16 18 20 22 24 26 . . . . . . . . . . . . .
-ID , Drain Current [A]
-VSD , Source-Drain Voltage [V]
!
80 0 C =C +C (C =sotd) iss gs gd ds h r e C =C +C oss ds gd C =C rss gd 60 0


-VGS , Gate-Source Voltage [V]
1 0
V =-0V 8 DS V =-0 V 20 DS V =-2 V 30 DS
Capacitance [pF]
C iss 40 0 C oss C rss 20 0 @Nts: oe 1 V =0V . GS 2 f=1Mz . H
5
@Nts:I =-. A oe 15 D 0 0 5 1 0 1 5 2 0
00 1 0
11 0
-VDS , Drain-Source Voltage [V]
QG , Total Gate Charge [nC]
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12 . 25 .
P-CHANNEL POWER MOSFET
+ & *
BVDSS , (Normalized) Drain-Source Breakdown Voltage
RDS(on) , (Normalized) Drain-Source On-Resistance
20 .
11 .
15 .
10 .
10 . @Nts: oe 1 V =-0V . GS 1 2 I =-.5A . D 07 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
09 .
@Nts: oe 1 V =0V . GS 2 I = - 5 A . D 20 -0 5 -5 2 0 2 5 5 0 7 5 10 0 15 2 10 5 15 7
05 .
08 . -5 7
00 . -5 7
TJ , Junction Temperature [oC]
TJ , Junction Temperature [oC]
/ -.
0
Oeaini Ti Ae prto n hs ra i L m t d b R DS(on) s iie y 1 0 s 0 1m s 10 0 D C 1m 0s
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20 .
-ID , Drain Current [A]
-ID , Drain Current [A]
13 0
11 0
15 .
10 .
1 -1 0
@Nts: oe 1 T = 2 oC .C 5 2 T = 1 0 oC .J 5 3 Snl Ple . ige us
05 .
1 -2 0
11 0
12 0
00 . 2 5
5 0
7 5
10 0
15 2
10 5
-VDS , Drain-Source Voltage [V]
Tc , Case Temperature [oC]
*&
Thermal Response
D=0.5 10
0
0.2 0.1 0.05
@ Notes : 1. Z J C (t)=3.5 o C/W Max. 2. Duty Factor, D=t1 /t2 3. TJ M -TC =PD M *Z J C (t)
PDM
Z (t) ,
10- 1
0.02 0.01 single pulse
JC
t1 t2
10- 5
10- 4
10- 3
10- 2
10- 1
100
101
t1 , Square Wave Pulse Duration
[sec]
P-CHANNEL POWER MOSFET

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TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DOMETM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R)
DISCLAIMER
FASTrTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM POPTM PowerTrench(R)
QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM UHCTM
VCXTM
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR INTERNATIONAL. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2000 Fairchild Semiconductor International
Rev. F1


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